SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

In a semiconductor device, a first gate structure having a first end portion is formed on a substrate. A second gate structure is formed on the substrate, and has a second end portion opposite to the first end portion of the first gate structure in a diagonal direction. A cross-coupling pattern is formed between the first and second gate structure, and electrically connects the first and second gate structures to each other. A first contact plug directly contacts an upper portion of the first end portion of the first gate structure and a first upper sidewall of the cross-coupling pattern. A second contact plug directly contacts an upper portion of the second end portion of the second gate structure and a second upper sidewall of the cross-coupling pattern. In the semiconductor device, a parasitic capacitance due to the cross-coupling structure may decrease.

主权项

1. A semiconductor device, comprising:
a first gate structure on a substrate, the first gate structure extending in a first direction and having a first end portion; a second gate structure on the substrate, the second gate structure extending in the first direction and being spaced apart from the first gate structure, and the second gate structure having a second end portion opposite to the first end portion of the first gate structure in a diagonal direction with respect to the first direction; a cross-coupling pattern between the first and second gate structures, the cross-coupling pattern contacting sidewalls of the first and second gate structures and electrically connecting the first and second gate structures to each other; a first contact plug directly contacting an upper portion of the first end portion of the first gate structure and a first upper sidewall of the cross-coupling pattern; and a second contact plug directly contacting an upper portion of the second end portion of the second gate structure and a second upper sidewall of the cross-coupling pattern.