| 摘要 |
For single-level cell flash memories and multi-level cell flash memories, different operations can be performed according to their stability when an abnormal status is terminated. Specifically, for the multi-level cell flash memories, when the abnormal status is terminated, a now physical block is used to proceed with write operation, and the previous physical block(s) would not be written any more. On the contrary, for the single-level cell flash memories, when the abnormal status is terminated, the controller needs to perform corresponding operations on the last physical page of the previous physical block(s). |
| 主权项 |
1. A non-volatile memory device comprising:
a non-volatile memory divided into a plurality of physical blocks, wherein each physical block is divided into a plurality of physical pages; and a connection interface connected to a host; and a controller, wherein the controller selects one physical block from the plurality of physical block to serve as an operation physical block, and when receiving a write command from the host, the controller writes data corresponding to the write command into the operation physical block, wherein when the controller performs a data read operation to read the operation physical block, if the data read operation is failed, the controller enables retry machine by using different potentials, wherein when the controller performs the recovery operation after an abnormal status occurs, the controller cancels the retry machine and reads the physical page in the operation physical block which is written finally at the last time, and checks a verification code of the physical page, and wherein check result of the verification code represents that an error occurs, the controller enables the retry machine by using different potentials to retry to read the physical page and re-programming the physical page. |
