| 摘要 |
A hard mask is provided which, while having a film density to demonstrate etching resistance, is low in film stress. The hard mask HD of this invention, which is provided to restrict the range of processing to the surface of a to-be-processed object W at the time of performing a predetermined processing to the to-be-processed object, is constituted by a titanium nitride film. This titanium nitride film is made into a two-layer structure. A lower-side layer L1 has a film thickness h1 within a range of 5 to 50% of the total film thickness ht of the hard mask, and also has a film density within a range of 3.5 to 4.7 g/cm3. An upper-side layer has a film density within a range of 4.8 to 5.3 g/cm3. |
