发明名称 ORGANIC SEMICONDUCTOR DOPING PROCESS
摘要 The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidised salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidised salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent. A process for producing a semiconductor device comprising a process for doping an organic semiconductor according to the invention is also described. Finally, a high purity p-dopant composition is described.
申请公布号 EP3005434(A1) 申请公布日期 2016.04.13
申请号 EP20140728261 申请日期 2014.05.30
申请人 ISIS INNOVATION LIMITED 发明人 SNAITH, HENRY;LEIJTENS, TOMAS;ABATE, ANTONIO;SELLINGER, ALAN
分类号 H01L51/00;H01G9/20;H01L51/42 主分类号 H01L51/00
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