发明名称 マスク成膜装置及びマスク成膜方法
摘要 The present invention is able to perform highly precise masked film formation in the state of maintaining the gap between a substrate and a mask at an appropriate value and is able to avoid a collision between the mask and the substrate edge at the point in time that the substrate and mask are overlapped. The substrate (S) is moved in a particular direction along a surface (Sa) for film formation, and until the leading edge in the direction of motion of the substrate (S) arrives above the mask (M) held at a mask-holding section (10), the mask (M) is held at a standby position apart from the motion pathway of the substrate (S) and a control unit (24) controls the inclination of the mask (M) in a manner so that the inclination of the mask (M) matches the inclination of the substrate (S) detected by a substrate inclination detection unit (22). After the leading edge in the direction of motion of the substrate (S) arrives above the mask (M), the gap between the mask (M) and the substrate (S) is detected by a gap detection unit (23), and the control unit (24) causes the mask (M) to approach the substrate (S) by a set interval.
申请公布号 JP5904577(B2) 申请公布日期 2016.04.13
申请号 JP20120010133 申请日期 2012.01.20
申请人 株式会社ブイ・テクノロジー 发明人 水村 通伸;工藤 修二;岩本 正実
分类号 C23C14/04 主分类号 C23C14/04
代理机构 代理人
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