发明名称 CONDUCTIVITY ENHANCEMENT OF SOLAR CELLS
摘要 Methods and structures for forming a contact region on a solar cell are presented. The solar cell can have a front side which faces the sun during normal operation, and a back side opposite the front side and a silicon substrate. The silicon substrate can include at least one doped region a dielectric layer formed over the doped region. The solar cell can also include a first metal contact, such as an electrolessly plated metal contact, within a contact region through a first dielectric layer and on the doped region. The solar cell can include a printed metal, such as aluminum, formed or deposited on the first metal contact. The solar cell can include a first metal layer having a first metal contact and the first printed metal. The solar cell can include a second metal layer, such as an electrolytically electroplated metal layer, formed on the first metal layer.
申请公布号 EP2973734(A4) 申请公布日期 2016.04.13
申请号 EP20140763695 申请日期 2014.03.14
申请人 SUNPOWER CORPORATION 发明人 ZHU, XI
分类号 H01L31/04;H01L31/0224;H01L31/18 主分类号 H01L31/04
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