发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
The present disclosure relates to a semiconductor device and a method of manufacturing the same. The semiconductor device may include a first metal gate electrode provided in a NMOS region of a substrate; and a second metal gate electrode provided in a PMOS region of the substrate, wherein the first and second metal gate electrodes may be formed of TiN material or TiAlN material. Here, the first metal gate electrode may have a higher titanium (Ti) content than the second metal gate electrode, and the second metal gate electrode may have a higher nitrogen (N) content than the first metal gate electrode. |
申请公布号 |
US9312190(B2) |
申请公布日期 |
2016.04.12 |
申请号 |
US201514866822 |
申请日期 |
2015.09.25 |
申请人 |
SK HYNIX INC.;INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY |
发明人 |
Choi Chang-Hwan |
分类号 |
H01L21/3205;H01L21/8238;H01L21/28 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a first TiN layer in a PMOS of a substrate; forming an Al thin film over the first TiN layer in the PMOS region and in a NMOS region of the substrate; forming a second TiN layer over the Al thin film; forming each of a first and a second TiAlN layers in the NMOS region and the PMOS region by annealing the substrate on which the second TiN layer is formed; and forming a first metal gate electrode in the NMOS region and a second metal gate electrode in the PMOS region by patterning the first and the second TiAlN layers, wherein the first TiAlN layer and the second TiAiN layer have a different composition. |
地址 |
Icheon KR |