finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

摘要

A method forming a semiconductor device that in one embodiment includes forming a gate structure on a channel region of fin structures, and forming a flowable dielectric material on a source region portion and a drain region portion of the fin structures. The flowable dielectric material is present at least between adjacent fin structures of the plurality of fin structures filling a space between the adjacent fin structures. An upper surface of the source region portion and the drain region portion of fin structures is exposed. An epitaxial semiconductor material is formed on the upper surface of the source region portion and the drain region portion of the fin structures.

主权项

1. A method of forming a semiconductor device comprising:
forming a gate structure on a channel region of a plurality of fin structures; forming a flowable dielectric material after the gate structure has been formed, the flowable dielectric material being formed on a source region portion and a drain region portion of the plurality of fin structures, wherein the flowable dielectric material is an oxide and is present at least between adjacent fin structures of the plurality of fin structures filling a space between said adjacent fin structures; forming a gate sidewall spacer on sidewalls of the gate structure after forming the flowable dielectric; exposing an upper surface of the source region portion and the drain region portion of the plurality of fin structures; and forming an epitaxial semiconductor material on the upper surface of the source region portion and the drain region portion of the plurality of fin structures.