| 发明名称 | Methods of operating memory devices | ||
| 摘要 | Methods of operating a memory device include applying an increasing sense voltage to a plurality of memory cells, wherein memory cells of the plurality of memory cells each store data states representing two or more digits of data. The methods further include, in response to the increasing sense voltage reaching a particular level, initiating a transfer of data values of a particular digit of data for each memory cell of the plurality of memory cells while continuing to apply the increasing sense voltage to the plurality of memory cells. | ||
| 申请公布号 | US9312020(B2) | 申请公布日期 | 2016.04.12 |
| 申请号 | US201514686092 | 申请日期 | 2015.04.14 |
| 申请人 | Micron Technology, Inc. | 发明人 | Hendrickson Nicholas |
| 分类号 | G11C16/00;G11C16/26;G11C16/04;G11C11/56;G11C7/10 | 主分类号 | G11C16/00 |
| 代理机构 | Dicke, Billig & Czaja, PLLC | 代理人 | Dicke, Billig & Czaja, PLLC |
| 主权项 | 1. A method of operating a memory device, comprising: applying an increasing sense voltage to a plurality of memory cells, wherein memory cells of the plurality of memory cells each store data states representing two or more digits of data; and in response to the increasing sense voltage reaching a particular level, initiating a transfer of data values of a particular digit of data for each memory cell of the plurality of memory cells while continuing to apply the increasing sense voltage to the plurality of memory cells. | ||
| 地址 | Boise ID US | ||