| 摘要 |
PROBLEM TO BE SOLVED: To suppress a shift of a threshold voltage to stabilize an operation, in a MIS type semiconductor device having a gate insulating film formed of ZrON.SOLUTION: In a MIS type semiconductor device that comprises a gate insulating film 11 on a semiconductor layer 10 and comprises a gate electrode 12 on the gate insulating film 11, and that has a gate application voltage of 5 V or more, ZrON(here, x and y satisfy x>0, y>0, 0.8≤y/x≤10, and 0.8≤0.59x+y≤1.0) is used as the gate insulating film 11. The MIS type semiconductor device having such gate insulating film 11 prevents fluctuation in the threshold voltage even when a large voltage is applied to the gate electrode, and can be stably operated.SELECTED DRAWING: Figure 1 |
