| 摘要 |
PROBLEM TO BE SOLVED: To provide a switching device drive circuit capable of stably operating a power semiconductor device module, having a plurality of power switching devices connected in parallel, with a reduced power loss in the power switching device at the cold operation of the power switching device.SOLUTION: In a gate voltage control/resistance switch circuit, the resistance value of transistor channel resistance is obtained based on a detection value by a channel resistance detection unit. Based on the resistance value, there is made the control of either giving a control instruction to control the gate voltage of the power switching device, or switching the resistance values of a turn-on resistor connected to a turn-on transistor and a turn-off resistor connected to a turn-off transistor.SELECTED DRAWING: Figure 2 |
