CONTAMINATION CONTROL METHOD OF VAPOR DEPOSITION APPARATUS AND METHOD OF PRODUCING EPITAXIAL SILICON WAFER

摘要

A contamination control method includes: a wafer loading step for loading a monitor wafer in a chamber of a vapor deposition apparatus; a heat-treatment repetition step for consecutively repeating a heat-treatment step for thermally treating the monitor wafer for predetermined times; a wafer unloading step for unloading the monitor wafer from the chamber; and a wafer-contamination-evaluation step for evaluating a metal-contamination degree of the monitor wafer unloaded out of the chamber. The heat-treatment step includes a first heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-containing gas and a second heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-chloride-containing gas and the hydrogen-containing gas.

主权项

1. A contamination control method of a vapor deposition apparatus, comprising:
loading a monitor wafer into an interior of a chamber of a vapor deposition apparatus; consecutively repeating a heat treatment for thermally treating the monitor wafer loaded into the interior of the chamber for predetermined number of times; unloading the monitor wafer after experiencing the repetition of the heat treatment from the interior of the chamber; and evaluating a metal-contamination degree of the monitor wafer unloaded out of the chamber, wherein the heat treatment comprises: a first heat-treatment, in which a hydrogen-chloride-containing gas is not fed into the interior of the chamber but a hydrogen-containing gas is fed into the chamber to thermally treat the monitor wafer in an atmosphere of the hydrogen-containing gas; and a second heat-treatment, in which the hydrogen-chloride-containing gas and the hydrogen-containing gas are fed into the interior of the chamber to thermally treat the monitor wafer in an atmosphere of the hydrogen-chloride-containing gas and the hydrogen-containing gas.