PLATING METHOD

摘要

A method of plating a substrate, such as a wafer, by applying a voltage between the substrate and an anode is disclosed. The plating method includes: preparing a substrate having a recess formed in a surface thereof, a conductive layer being formed in at least a part of the recess; placing an insoluble anode and the substrate in contact with a copper sulfate plating solution containing an additive; applying a predetermined plating voltage between the substrate and the insoluble anode by a plating power source to plate the substrate; and shutting off a reverse electric current, which flows from the insoluble anode to the substrate via the plating power source, by a diode disposed between the insoluble anode and the substrate when the predetermined plating voltage is not applied.

主权项

1. A method for plating a substrate while preventing a generation of an electrolyte component which inhibits bottom-up plating of the substrate, comprising:
preparing a substrate having a recess formed in a surface thereof, a conductive layer being formed in at least a part of the recess; placing an insoluble anode and the substrate in contact with a copper sulfate plating solution containing an additive; applying a predetermined plating voltage between the substrate and the insoluble anode by a plating power source to plate the substrate; and shutting off a reverse electric current, which flows from the insoluble anode to the substrate via the plating power source, by a diode disposed between the insoluble anode and the substrate when the predetermined plating voltage is not applied.