3D SEMICIRCULAR VERTICAL NAND STRING WITH SELF ALIGNED FLOATING GATE OR CHARGE TRAP CELL MEMORY CELLS AND METHODS OF FABRICATING AND OPERATING THE SAME

摘要

A memory device includes a plurality of memory cells arranged in a string substantially perpendicular to the major surface of the substrate (10) in a plurality of device levels, at least one first select gate electrode located between the major surface of the substrate and the plurality of memory cells, at least one second select gate electrode located above the plurality of memory cells, a semiconductor channel (601) having a portion that extends vertically along a direction perpendicular to the major surface, a first memory film (54) contacting a first side of the semiconductor channel, and a second memory film (54) contacting a second side of the semiconductor channel. The second memory film is electrically isolated from the first memory film, and is located at a same level as the first memory film.