| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which allows for measurement with good reproducibility, when measuring the resistivity of an N type silicon epitaxial layer by surface photovoltage method.SOLUTION: A resistivity measurement method of an N type silicon epitaxial layer includes an oxide film removal step for removing the surface oxide film of the N type silicon epitaxial layer, an oxide film formation step for forming a new oxide film on the surface of the N type silicon epitaxial layer from which the surface oxide film is removed, and a depth of depletion layer measurement method for measuring the depth of a depletion layer formed in the vicinity of the surface of the N type silicon epitaxial layer by surface photovoltage method, by charging the surface of the new oxide film electrostatically by corona discharge. |
