发明名称 |
Integrated piezoelectric resonator and additional active circuit |
摘要 |
A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator. |
申请公布号 |
US9305971(B2) |
申请公布日期 |
2016.04.05 |
申请号 |
US201514816266 |
申请日期 |
2015.08.03 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Jacobsen Stuart M.;Ramaswamy Sridhar;Krenik William Robert |
分类号 |
H01L27/20;H01L41/29;H03H9/05;H03H9/17 |
主分类号 |
H01L27/20 |
代理机构 |
|
代理人 |
Garner Jacqueline J.;Cimino Frank D. |
主权项 |
1. A method of forming a semiconductor device comprising the steps of:
forming a piezoelectric resonator on a first portion of a semiconductor wafer by: depositing a first electrode; depositing a piezoelectric layer over the first electrode; and depositing a second electrode over the piezoelectric layer; forming an active circuit on a second portion of said wafer laterally adjacent to the first portion; and forming an electrical connection from the active circuit to said piezoelectric resonator, wherein the active circuit includes a frequency divider. |
地址 |
Dallas TX US |