发明名称 Integrated piezoelectric resonator and additional active circuit
摘要 A semiconductor device comprises a semiconductor wafer; a piezoelectric resonator formed on the wafer, and an active circuit also formed on the wafer. The active circuit (e.g., a frequency divider) is electrically connected to the piezoelectric resonator.
申请公布号 US9305971(B2) 申请公布日期 2016.04.05
申请号 US201514816266 申请日期 2015.08.03
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 Jacobsen Stuart M.;Ramaswamy Sridhar;Krenik William Robert
分类号 H01L27/20;H01L41/29;H03H9/05;H03H9/17 主分类号 H01L27/20
代理机构 代理人 Garner Jacqueline J.;Cimino Frank D.
主权项 1. A method of forming a semiconductor device comprising the steps of: forming a piezoelectric resonator on a first portion of a semiconductor wafer by: depositing a first electrode; depositing a piezoelectric layer over the first electrode; and depositing a second electrode over the piezoelectric layer; forming an active circuit on a second portion of said wafer laterally adjacent to the first portion; and forming an electrical connection from the active circuit to said piezoelectric resonator, wherein the active circuit includes a frequency divider.
地址 Dallas TX US