| 发明名称 | Method of fabricating semiconductor device | ||
| 摘要 | A method of fabricating a semiconductor device includes: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1 μm or less, and the metal layer being exposed in the first portion. | ||
| 申请公布号 | US9305788(B2) | 申请公布日期 | 2016.04.05 |
| 申请号 | US201314066436 | 申请日期 | 2013.10.29 |
| 申请人 | Sumitomo Electric Device Innovations, Inc. | 发明人 | Nishi Masahiro |
| 分类号 | H01L21/285;H01L21/768;H01L23/532;H01L29/66;H01L29/20 | 主分类号 | H01L21/285 |
| 代理机构 | Venable LLP | 代理人 | Venable LLP ;Sartori Michael A.;Ostler Trent B. |
| 主权项 | 1. A method of fabricating a semiconductor device, the method comprising: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1μm or less, and the metal layer being exposed in the first portion. | ||
| 地址 | Yokohama-shi JP | ||