| 摘要 |
PROBLEM TO BE SOLVED: To prevent a conductive film on an upper surface of a dummy pillar from being short-circuited with a semiconductor substrate due to exposure of the semiconductor substrate on the upper surface of the dummy pillar.SOLUTION: A semiconductor device 1 comprises: a semiconductor pillar sp1 erected in an active region ka; a dummy pillar ip1 erected in an intermediate element isolation region is; an auxiliary pillar bp1 overlapping the boundary between the active region ka and the intermediate element isolation region is and erected so as to be located between the semiconductor pillar sp1 and the dummy pillar ip1; a gate electrode g1 formed on a side surface of the semiconductor pillar sp1; a gate electrode ig1 formed on a side surface of the auxiliary pillar bp1 and coming into contact with the gate electrode g1; a gate electrode sg formed on a side surface of the dummy pillar ip1 and coming into contact with the gate electrode ig1; a pillar upper surface wiring 40 formed on an upper surface of the dummy pillar ip1 and electrically connected to the gate electrode sg; and a mask film 4 covering an upper surface of the auxiliary pillar bp1.SELECTED DRAWING: Figure 1 |
