| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal ingot which has dislocation suppressed nearby a boundary surface between a seed crystal and a grown silicon carbide single crystal, and a method of manufacturing the same.SOLUTION: There is provided a silicon carbide single crystal ingot manufactured by growing a silicon carbide crystal on a seed crystal 2 made of a silicon carbide single crystal by a sublimation recrystallization method, the silicon carbide single crystal ingot having a penetration edge dislocation density which is less than 100 times in a grown silicon carbide single crystal region as large as in a seed crystal region nearby a boundary surface between the seed crystal at least at a diameter-directional center part of the ingot and the grown silicon carbide single crystal having been grown. Also, there is provided a method of manufacturing the silicon carbide single crystal ingot such that a silicon gas supply container 15 enabling a silicon gas produced by vaporization of a silicon material 14 to be supplied is arranged in a crystal growth space, and the silicon carbide single crystal begins to be grown on the seed crystal 2 after a crystal growth surface of the seed crystal 2 is etched.SELECTED DRAWING: Figure 2 |
