发明名称 |
MULTIHEIGHT ELECTRICALLY CONDUCTIVE VIA CONTACTS FOR A MULTILEVEL INTERCONNECT STRUCTURE |
摘要 |
A method of making multi-level contacts includes providing an in-process multilevel device having a device region and a contact region including a stack of alternating sacrificial layers and insulating layers located over a major surface of a substrate. A contact mask having contact mask openings is provided over the stack, and a first over mask having first over mask openings is provided over the contact mask. A subset of the contact mask openings is substantially aligned with the first over mask openings. Contact openings are formed through the stack, wherein each of the contact openings extends substantially perpendicular to the major surface of the substrate to a respective one of the sacrificial layers. A plurality of electrically conductive via contacts is formed in the plurality of the contact openings. |
申请公布号 |
US2016093524(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201414501389 |
申请日期 |
2014.09.30 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
Izumi Keisuke;Sano Michiaki;Sasaki Hiroshi |
分类号 |
H01L21/768;H01L27/115 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of making multi-level contacts, comprising:
providing an in-process multilevel device comprising a device region and a contact region comprising a stack of plurality of alternating sacrificial layers and insulating layers located over a major surface of a substrate; providing a contact mask with a plurality of contact mask openings over the stack; providing a first over mask with a plurality of first over mask openings over the contact mask, wherein a first subset of the plurality of contact mask openings is substantially aligned with the plurality of first over mask openings; forming a plurality of contact openings, wherein each of the plurality of contact openings extends substantially perpendicular to the major surface of the substrate through the stack to a respective one of the sacrificial layers; and depositing a plurality of electrically conductive via contacts in the plurality of the contact openings. |
地址 |
PLANO TX US |