THREE-LEVEL POWER CONVERTER AND POWER UNIT THEREOF

摘要

Provided are a three-level power converter and a power unit thereof. The power unit includes a power switch module and a laminated busbar structure. The power switch module includes a first power semiconductor switch module and a clamping diode module, which have a first, second, and third terminal respectively. The laminated busbar structure includes a third, second, and first busbar layer laminated on the power switch module. The third busbar layer includes a first sub-busbar connecting to the first terminal of the first power semiconductor switch module, a second sub-busbar connecting to the third terminal of the first power semiconductor switch module and the first terminal of the clamping diode module, a third sub-busbar connecting to the second terminal of the clamping diode module and the third terminal of the second power semiconductor switch module, and a fourth sub-busbar connecting to the second terminal of the second power semiconductor switch module.

主权项

1. A power unit comprising a power switch module and a laminated busbar structure, wherein,
the power switch module comprising: a first power semiconductor switch module having a first terminal, a second terminal and a third terminal; a clamping diode module having a first terminal, a second terminal and a third terminal; and a second power semiconductor switch module having a first terminal, a second terminal and a third terminal; the laminated busbar structure comprising a third busbar layer, a second busbar layer and a first busbar layer laminated on the power switch module; wherein, the first busbar layer electrically connects to the third terminal of the clamping diode module; the second busbar layer electrically connects to the second terminal of the first power semiconductor switch module and the first terminal of the second power semiconductor switch module respectively; the third busbar layer comprises a first sub-busbar, a second sub-busbar, a third sub-busbar and a fourth sub-busbar; the first sub-busbar electrically connects to the first terminal of the first power semiconductor switch module; the second sub-busbar electrically connects to the third terminal of the first power semiconductor switch module and the first terminal of the clamping diode module respectively; the third sub-busbar electrically connects to the second terminal of the clamping diode module and the third terminal of the second power semiconductor switch module respectively; and the fourth sub-busbar electrically connects to the second end of the second power semiconductor switch module.