| 发明名称 |
Photoacid Generator Bound to Floating Additive Polymer |
| 摘要 |
Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a middle layer comprising a floating additive polymer (FAP) at an upper surface of the middle layer, the FAP chemically bound to a photoacid generator (PAG) and including a fluorine-containing material over the substrate, forming a photoresist layer over the middle layer, exposing the photoresist layer and the middle layer to an exposure energy to produce acid bound to the middle layer in the exposed areas of the middle layer, and developing the photoresist layer. |
| 申请公布号 |
US2016093493(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514869400 |
申请日期 |
2015.09.29 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chang Ching-Yu;Liu Chen-Yu |
| 分类号 |
H01L21/033;G03F7/004 |
主分类号 |
H01L21/033 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a semiconductor device, the method comprising:
providing a substrate; forming a middle layer comprising a floating additive polymer (FAP) at an upper surface of the middle layer, the FAP chemically bound to a photoacid generator (PAG) and including a fluorine-containing material over the substrate; forming a photoresist layer over the middle layer; exposing the photoresist layer and the middle layer to an exposure energy to produce acid bound to the middle layer in the exposed areas of the middle layer; and developing the photoresist layer. |
| 地址 |
Hsin-Chu TW |
