| 发明名称 |
High Throughput Vacuum Deposition Sources and System |
| 摘要 |
A high throughput deposition apparatus includes a first process chamber; one or more first deposition sources in the first process chamber; a first main carrier comprising a plurality of first sub-carriers each configured to carry one or more substrate each positioned around an axial direction and configured to receive a first deposition material from the one or more first deposition sources, wherein the first sub-carriers define a curved surface around the axial direction; and a transport mechanism configured to move the first main carrier along the axial direction through the first process chamber. |
| 申请公布号 |
US2016093478(A1) |
申请公布日期 |
2016.03.31 |
| 申请号 |
US201514672812 |
申请日期 |
2015.03.30 |
| 申请人 |
Guo Xinsheng |
发明人 |
Guo Xinsheng |
| 分类号 |
H01J37/34;C23C14/50;C23C16/458;C23C14/34;C23C16/50;C23C16/455 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A high throughput deposition apparatus, comprising:
a first process chamber; one or more first deposition sources in the first process chamber; a first main carrier comprising a plurality of first sub-carriers each configured to carry one or more substrate each positioned around an axial direction and configured to receive a first deposition material from the one or more first deposition sources, wherein the first sub-carriers define a curved surface around the axial direction; and a transport mechanism configured to move the first main carrier along the axial direction through the first process chamber. |
| 地址 |
US |
