HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR INTEGRATED INTO EXTREMELY THIN SEMICONDUCTOR ON INSULATOR PROCESS

摘要

An electrical device including a first semiconductor device in a first region of the SOI substrate and a second semiconductor device is present in a second region of the SOI substrate. The first semiconductor device comprises a first source and drain region that is present in the SOI layer of the SOI substrate, raised source and drain regions on the first source and drain regions, and a first gate structure on a channel region portion of the SOI layer. The second semiconductor device comprises a second source and drain region present in a base semiconductor layer of the SOI substrate and a second gate structure, wherein a gate dielectric of the second gate structure is provided by a buried dielectric layer of the SOI substrate and a gate conductor of the second gate structure comprises a same material as the raised source and drain region.

主权项

1. A method of forming a semiconductor device comprising:
forming a first semiconductor device in the a first device region of a semiconductor on insulator (SOI) substrate, wherein the first semiconductor device includes a first source region and a first drain region that is formed in the SOI layer, raised source and drain regions on the first source and drain regions, and a first gate structure on a channel region portion of the SOI layer; and forming a second semiconductor device in the second device region of the SOI substrate, wherein the second device includes a second source region and a second drain region that is present in a base semiconductor substrate of the SOI substrate, and a second gate structure including a gate dielectric provided by a buried dielectric layer of the SOI substrate and a gate conductor comprised of a same material as the raised source and drain regions.