| 摘要 |
A device comprises PNPN junction (11,10,12,14) formed on a Ntype semiconductor substrate (10), a P-type semiconductor region (13) formed on an adjacent position to the PNPN junction, a N-type semiconductor region (15) formed in the P-type semiconductor region, and a wire (22), formed on an isolation film (16), for connecting a cathode electrode (18) of the GTO thyristor to an electrode of the P- type semiconductor region. The anode electrode (17) and gate electrode (19) of the GTO thyristor and the N-type semiconductor region are connected to the anode, gate, cathode terminals.
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