| 摘要 |
On a substrate, a first material layer and a first photoresist film are formed. The first photoresist film is divided into a plurality of shot areas and exposed, and in a boundary area of adjacent shot areas, an overlapping area in which shot areas are overlapped can be overlapped and exposed. The first photoresist film is developed to form a first photoresist pattern, and the first photoresist pattern is used as a mask to form a first pattern. On the first pattern, a second material layer and a second photoresist film are formed. A second photoresist film is divided into a plurality of shot areas and exposed, and a boundary area of adjacent shot areas is exposed at a predetermined distance away from an overlapping area generated while the first photoresist film is exposed. The second photoresist film is developed to form a second photoresist pattern, and the second photoresist pattern is used as a mask to form a second pattern. On the second pattern, a third material layer and a third photoresist film are formed. The third photoresist film is divided into a plurality of shot areas and exposed, and a boundary area of adjacent shot areas is exposed at a predetermined distance away from a boundary area generated while the second photoresist film is exposed. The third photoresist film is developed to from the third photoresist pattern, and the third photoresist pattern is used as a mask to form a third pattern. |
