| 摘要 |
Provided are a light-emitting element and a method for preparing same. The method includes a method for growing a p-type semiconductor layer having a low-concentration doping layer, an undoped layer and a high-concentration doping layer. During the growth of the low-concentration doping layer and the high-concentration doping layer, both N 2 gas and H 2 gas are supplied, whereas, during the growth of the undoped layer, the supply of H 2 gas is shut off and N 2 gas is supplied. Accordingly, the doping concentration of Mg contained in the undoped layer can be further lowered, and thus, hole mobility within the p-type semiconductor layer can be enhanced. |
