发明名称 Method for deposition of high-performance coatings and encapsulated electronic devices
摘要 A method is disclosed for forming leak-free coatings on polymeric or other surfaces that provide optical functions or protect underlying layers from exposure to oxygen and water vapor and do not crack or peel in outdoor environments. This method may include both cleaning and surface modification steps preceding coating. The combined method greatly reduces defects in any barrier layer and provides weatherability of coatings. Specific commercial applications that benefit from this include manufacturing of photovoltaic devices or organic light emitting diode (OLED) devices including lighting and displays.
申请公布号 US9299956(B2) 申请公布日期 2016.03.29
申请号 US201313917313 申请日期 2013.06.13
申请人 Aixtron, Inc. 发明人 Savas Stephen E.;Wiesnoski Allan;Chatham Hood;Galewski Carl
分类号 H01L51/56;H01L31/0203;H01L51/52;H01L31/0216;H01L31/048 主分类号 H01L51/56
代理机构 Ascenda Law Group, PC 代理人 Ascenda Law Group, PC
主权项 1. A method for forming a moisture and oxygen permeation barrier on an electronic device on a rectangular or continuous web substrate, the method comprising: while maintaining the substrate in a temperature range below 100° C., subjecting the substrate to a substrate surface modification step so as to form a first layer upon said electronic device, the subjecting including both plasma enhanced chemical vapor deposition of a transparent dielectric material and sputter etching of said transparent dielectric material on the substrate surface by a plasma adjacent to the substrate, wherein a rate of the sputter etching is reduced from a first sputter etching rate to a second sputter etching rate less than the first sputter etching rate during the deposition of the transparent dielectric material, after deposition of an initial portion of the transparent dielectric material measuring 5 nm to 30 nm in thickness; and while maintaining the substrate at a temperature below about 100° C., subjecting the substrate supporting the electronic device to a plasma enhanced chemical vapor deposition process so as to form a second layer comprising a hermetic barrier layer.
地址 Sunnyvale CA US