Abutment structure of semiconductor cell

摘要

An abutment structure comprises a power rail, a ground rail parallel to the power rail, first cells and second cells. An area is defined between the power and the ground rails. A portion of each first and second cell overlaps the power and the ground rails, and another portion thereof is within the area. The first cells are within the abutment structure with original patterns thereof. The second cells respectively has an original pattern and a base pattern being a flip pattern of the original pattern, and are within the area with alternate of the original and the base patterns. The first and the second cells are within the area alternately without overlapping. Alternatively, the first and the second cells may also be within different areas, and the second cells are within different areas respectively with the base pattern and a flip pattern of the base pattern thereof.

主权项

1. An abutment structure, comprising:
a plurality of power rails; a plurality of ground rails, disposed parallel to said power rails and alternating with said power rails, wherein an area being defined between any one of said power rails and one of said ground rails adjacent thereto; a plurality of first cells, a portion of each of said first cells overlapping one of said power rails and one of said ground rails adjacent thereto, and another portion thereof located within one of said areas located between one of said power rails and one of said ground rails overlapped by said another portion, wherein each of said first cells having an original pattern; and a plurality of second cells, located within two of said areas adjacent to one of said areas disposed with said first cells, wherein each of said second cells having an original pattern, a base pattern being a flip pattern of said original pattern and a alternative pattern being a flip pattern of said base pattern, wherein some of said base patterns of said second cells being disposed to one of said areas that said second cells located within, and said alternative patterns of said second cells being disposed to the other one of said areas that said second cells located within.