Semiconductor device and method for manufacturing the same

摘要

An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

主权项

1. A semiconductor device comprising:
a semiconductor layer including a channel region, the channel region comprising indium, zinc, oxygen and nitrogen, wherein the semiconductor layer is formed on an insulating film comprising silicon oxide where an amount of released oxygen converted to oxygen atoms in thermal desorption spectroscopy is greater than or equal to 1.0×1020 atoms/cm3; a gate electrode; a gate insulating layer between the gate electrode and the semiconductor layer; and a source electrode and a drain electrode electrically connected to the semiconductor layer.