SEMICONDUCTOR DEVICE, INVERTER MODULE, INVERTER, RAILWAY VEHICLE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Provided is a SiC element capable of preventing a current from flowing in a built-in diode, and preventing an on-voltage increase in a semiconductor device wherein a MOSFET including the built-in diode is formed on a SiC substrate 1. In order to provide the SiC element, an electric field in the substrate is attenuated by mounting both the MOSFET and a junction diode that does not include a P-type semiconductor layer, and by forming an embedded P-type layer in an epitaxial layer on the SiC substrate. Consequently, low resistance and high withstand voltage of the junction diode are achieved.