发明名称 MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY CELL
摘要 Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.
申请公布号 US2016087200(A1) 申请公布日期 2016.03.24
申请号 US201514947455 申请日期 2015.11.20
申请人 Micron Technology, Inc. 发明人 Redaelli Andrea;Pirovano Agostino
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
主权项
地址 Boise ID US