发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD FOR THE SAME AND DISPLAY
摘要 Disclosed are a thin film transistor array substrate, a manufacturing method thereof, and a display device. According to an embodiment of the present invention, the thin film transistor array substrate comprises at least one thin film transistor. The thin film transistor comprises: a semiconductor layer having a source region and a drain region having a first doping concentration on a substrate, a channel region which is arranged between the source region and the drain region and has a second doping concentration, and an undoped region extended from the source region and the drain region; a gate insulation film on the semiconductor layer; a gate electrode arranged on the gate insulation film, wherein at least a portion thereof overlaps the channel region; and a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the source region and the drain region. The second doping concentration is lower than the first doping concentration.
申请公布号 KR20160032339(A) 申请公布日期 2016.03.24
申请号 KR20140122043 申请日期 2014.09.15
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 JIN GUANG HAI;KIM, YONG JOO;LEE, MIN HYENG
分类号 H01L29/786;H01L21/336;H01L27/32 主分类号 H01L29/786
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