发明名称 |
THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD FOR THE SAME AND DISPLAY |
摘要 |
Disclosed are a thin film transistor array substrate, a manufacturing method thereof, and a display device. According to an embodiment of the present invention, the thin film transistor array substrate comprises at least one thin film transistor. The thin film transistor comprises: a semiconductor layer having a source region and a drain region having a first doping concentration on a substrate, a channel region which is arranged between the source region and the drain region and has a second doping concentration, and an undoped region extended from the source region and the drain region; a gate insulation film on the semiconductor layer; a gate electrode arranged on the gate insulation film, wherein at least a portion thereof overlaps the channel region; and a source electrode and a drain electrode insulated from the gate electrode and electrically connected to the source region and the drain region. The second doping concentration is lower than the first doping concentration. |
申请公布号 |
KR20160032339(A) |
申请公布日期 |
2016.03.24 |
申请号 |
KR20140122043 |
申请日期 |
2014.09.15 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
JIN GUANG HAI;KIM, YONG JOO;LEE, MIN HYENG |
分类号 |
H01L29/786;H01L21/336;H01L27/32 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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