| 发明名称 |
RESISTIVE RANDOM ACCESS MEMORY |
| 摘要 |
A resistive random access memory (RRAM) includes a top electrode (TE), a bottom electrode (BE), and a transition metal oxide (TMO) layer between the top and the bottom electrodes. The RRAM further includes a metal cap layer above the top electrode and a transparent metal oxide (TCO) layer between the metal cap layer and the top electrode. |
| 申请公布号 |
US2016087198(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514830742 |
申请日期 |
2015.08.20 |
| 申请人 |
Winbond Electronics Corp. |
发明人 |
Chang Shuo-Che |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive random access memory (RRAM), comprising a top electrode, a bottom electrode and a transition metal oxide layer between the top electrode and the bottom electrode, the RRAM further comprising:
a metal cap layer disposed above the bottom electrode; and a first transparent conductive oxide layer disposed between the metal cap layer and the top electrode. |
| 地址 |
Taichung City TW |
