SEMICONDUCTOR DEVICE

摘要

A semiconductor device according to an embodiment includes a SiC layer including a first region provided at a surface. The first region satisfies NA−ND<5×1015 cm−3 when a concentration of a p-type impurity is denoted by NA, whereas a concentration of an n-type impurity is denoted by ND. The surface is inclined at 0 degrees or more and 10 degrees or less to a {000-1} face, or the surface having a normal direction inclined at 80 degrees or more and 90 degrees or less to a <000-1> direction. The device includes a gate electrode, a gate insulating film provided between the SiC layer and the gate electrode, and a second region provided between the first region and the gate insulating film. The second region has a nitrogen concentration higher than 1×1022 cm−3.

主权项

1. A semiconductor device comprising:
a SiC layer including a first region provided at a surface, the first region satisfies NA−ND<5×1015 cm−3 when a concentration of a p-type impurity is denoted by NA, whereas a concentration of an n-type impurity is denoted by ND, the surface being inclined at 0 degrees or more and 10 degrees or less to a {000-1} face, or the surface having a normal direction inclined at 80 degrees or more and 90 degrees or less to a <000-1> direction; a gate electrode; a gate insulating film provided between the SiC layer and the gate electrode; and a second region provided between the first region and the gate insulating film, the second region having a nitrogen concentration higher than 1×1022 cm−3.