| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that an equipotential surface of a peripheral part of an outer periphery of a wafer curves in conventional plasma processing and an etching rate of the periphery of the outer peripheral part of the wafer is not uniform. <P>SOLUTION: There is provided a plasma processing apparatus and a processing method that make the etching rate of the peripheral part of an outer periphery of a wafer highly uniform by improving curvature of the equipotential surface 301 of the periphery of the outer peripheral part of the wafer by arranging a ring-shaped member 303 provided to be equal in potential to an electrode 111 for wafer mounting at a step part of the electrode 111 for wafer mounting, and making an upper surface of the ring-shaped member 303 higher than an upper surface of the electrode 111 for wafer mounting. <P>COPYRIGHT: (C)2013,JPO&INPIT |
