| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device and read out method thereof capable of reducing the circuit scale.SOLUTION: The nonvolatile semiconductor memory device has: a memory cell; a sense amplifier (3) which includes a latch part (TDL), wiring (LBUS), a first transistor (26), a second transistor (29), a third transistor (28), a first node (N7) and a second node (power supply D); and a control section (6) that controls the sense amplifier. The control section controls the electric potential at the first node and the second node to hold the data on the latch part before sensing. After discharging the wiring, the control section controls the third transistor (28) according to the wiring voltage value to supply a first voltage (CELSRC or voltage V1) to a first end (LAT_T) to thereby determine the data stored in the latch part.SELECTED DRAWING: Figure 5 |
