Epitaxial block layer for a fin field effect transistor device

摘要

Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.

主权项

1. A device, comprising:
a dummy gate and a set of fin field effect transistors (FinFETs) over a substrate, wherein the tops of the dummy gate and the set of FinFETs define a first portion of the horizontal surface of the device; a continuous spacer layer over the dummy gate, each of the set of FinFETs, and a second portion of the horizontal surface of the device; a set of recesses in the substrate, and a source and drain epi material within the set of recesses in the substrate, wherein the tops of the epi material within the set of recesses define a third portion of the horizontal surface of the device.