Pressure transfer process for thin film solar cell fabrication

摘要

In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim 1 a chalcogenide absorber layer is formed on the substrate.

主权项

1. A method for fabricating a thin film solar cell, the method comprising the steps of:
providing a substrate; using a first pair of rollers to both i) deposit a first absorber material as a layer A on the substrate while ii) applying pressure to both the substrate and the layer A; using a second pair of rollers to both i) deposit a second absorber material as a layer B on the layer A while ii) applying pressure to both the substrate and the layer B; using a third pair of rollers to both i) deposit a third absorber material as a layer C on the layer B while ii) applying pressure to both the substrate and the layer C; using a fourth pair of rollers to both i) deposit a fourth absorber material as a layer D on the layer C while ii) applying pressure to both the substrate and the layer D; and annealing the layers A-D while applying pressure to both the substrate and the layer D, wherein the first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein a chalcogenide absorber layer is formed on the substrate, and wherein the annealing step is performed using a fifth pair of rollers to both i) heat the layers A-D while ii) applying pressure to both the substrate and the layer D.