发明名称 Codewords that span pages of memory
摘要 The present disclosure includes apparatuses and methods for codewords that span pages of memory. A number of methods include writing a first portion of a primary codeword to a first page in a first block of memory and writing a second portion of the primary codeword to a second page in a second block of memory. The primary codeword can be included in a secondary codeword. The method can include writing a first portion of the secondary codeword in the memory and writing a second portion of the secondary codeword to a different page and block of the memory than the first portion of the secondary codeword.
申请公布号 US9292382(B2) 申请公布日期 2016.03.22
申请号 US201514802005 申请日期 2015.07.17
申请人 Micron Technology, Inc. 发明人 Larsen Troy D.;Culley Martin L.
分类号 G11C29/00;G06F11/10;G11C29/52 主分类号 G11C29/00
代理机构 Brooks, Cameron & Huebsch, PLLC 代理人 Brooks, Cameron & Huebsch, PLLC
主权项 1. A method, comprising: using a controller to control: writing: a first portion of a first primary codeword to a first page in a first block of memory;a second portion of the first primary codeword to a second page in a second block of memory; anda first portion and a second portion of a second primary codeword to the second page in the second block of the memory; andtesting a number of blocks including the first block and the second block of the memory; and when the first block of memory is a bad block of the memory, using the controller to control writing: neither the first portion nor the second portion of the first primary codeword to the memory; andthe first portion and the second portion of the second primary codeword to the memory.
地址 Boise ID US