发明名称 |
Codewords that span pages of memory |
摘要 |
The present disclosure includes apparatuses and methods for codewords that span pages of memory. A number of methods include writing a first portion of a primary codeword to a first page in a first block of memory and writing a second portion of the primary codeword to a second page in a second block of memory. The primary codeword can be included in a secondary codeword. The method can include writing a first portion of the secondary codeword in the memory and writing a second portion of the secondary codeword to a different page and block of the memory than the first portion of the secondary codeword. |
申请公布号 |
US9292382(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201514802005 |
申请日期 |
2015.07.17 |
申请人 |
Micron Technology, Inc. |
发明人 |
Larsen Troy D.;Culley Martin L. |
分类号 |
G11C29/00;G06F11/10;G11C29/52 |
主分类号 |
G11C29/00 |
代理机构 |
Brooks, Cameron & Huebsch, PLLC |
代理人 |
Brooks, Cameron & Huebsch, PLLC |
主权项 |
1. A method, comprising:
using a controller to control:
writing:
a first portion of a first primary codeword to a first page in a first block of memory;a second portion of the first primary codeword to a second page in a second block of memory; anda first portion and a second portion of a second primary codeword to the second page in the second block of the memory; andtesting a number of blocks including the first block and the second block of the memory; and when the first block of memory is a bad block of the memory, using the controller to control writing:
neither the first portion nor the second portion of the first primary codeword to the memory; andthe first portion and the second portion of the second primary codeword to the memory. |
地址 |
Boise ID US |