METHOD FOR PATTERNING BLOCK COPOLYMER USING MIXED SOLVENT AND MIXED BLOCK COPOLYMER AND METHOD FOR MANUFACTURING NANOSTRUCTURES USING THE SAME

摘要

The present invention relates to a method for manufacturing a phase change random access memory using a mixed block copolymer comprising the steps of: sequentially laminating a lower electrode, a heat generating layer and a phase changing layer on a substrate; forming a block copolymer mold which has a spot at the center of a cylinder on the phase changing layer; manufacturing an upper electrode ring which is defined by an area between a hole and the spot; and etching the lower electrode, the heat generating layer and the phase changing layer in an area except an area in which the upper electrode ring is formed.