| 发明名称 | Bidirectional Zener diode | ||
| 摘要 | A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, and the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode. | ||
| 申请公布号 | US9293605(B2) | 申请公布日期 | 2016.03.22 |
| 申请号 | US201514635627 | 申请日期 | 2015.03.02 |
| 申请人 | ROHM CO., LTD. | 发明人 | Yamamoto Hiroki |
| 分类号 | H01L29/78;H01L29/866;H01L29/417;H01L27/02;H01L29/747;H01L29/66;H01L29/06 | 主分类号 | H01L29/78 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. A bidirectional Zener diode comprising: a semiconductor substrate of a first conductivity type; a first electrode and a second electrode which are defined on the semiconductor substrate; and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, the bidirectional Zener diode wherein the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode. | ||
| 地址 | Kyoto JP | ||