DOUBLE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A double thin film transistor includes a first semiconductor layer, a gate, a second semiconductor layer, a first insulating layer, a second insulating layer, a first source, a first drain, a second source and a second drain. The first semiconductor layer is disposed over a substrate. The gate is disposed over the first semiconductor layer. The second semiconductor layer is disposed over the gate, and the first and second semiconductor layers are the same conductive type. The first insulating layer is disposed between the first semiconductor layer and the gate. The second insulating layer is disposed between the gate and the second semiconductor layer. The first source and the first drain are disposed between the substrate and the second insulating layer. The second source and the second drain are disposed over the second insulating layer.

主权项

1. A double thin film transistor, comprising:
a first semiconductor layer disposed over a substrate; a gate disposed over the first semiconductor layer; a second semiconductor layer over the gate, wherein the first semiconductor layer and the second semiconductor layer are the same conductive type; a first insulating layer disposed between the first semiconductor layer and the gate; a second insulating layer disposed between the gate and the second semiconductor layer; a first source and a first drain disposed between the substrate and the second insulating layer, and the first semiconductor layer in contact with a portion of the first source and a portion of the first drain; and a second source and a second drain disposed over the second insulating layer, and the second semiconductor layer in contact with a portion of the second source and a portion of the second drain.