ETCHING METHOD AND ETCHING APPARATUS

摘要

An etching method for performing a plasma etching on an object to be processed by using a supplied gas is provided. In the etching method, a temperature of a focus ring is adjusted by using a first temperature adjustment mechanism controllable independently of a temperature control of the object to be processed while measuring a time variation until the temperature of the focus ring reaches a target value. A degree of consumption of the focus ring is estimated from the measured time variation based on a preliminarily set correlation between the time variation and the degree of consumption of the focus ring. The target value of the temperature of the focus ring is corrected based on the estimated degree of consumption of the focus ring.

主权项

1. An etching method for performing a plasma etching on an object to be processed by using a supplied gas, comprising steps of:
adjusting a temperature of a focus ring by using a first temperature adjustment mechanism controllable independently of a temperature control of the object to be processed while measuring a time variation until the temperature of the focus ring reaches a target value; estimating a degree of consumption of the focus ring from the measured time variation based on a preliminarily set correlation between the time variation and the degree of consumption of the focus ring; and correcting the target value of the temperature of the focus ring based on the estimated degree of consumption of the focus ring.