发明名称 Adaptive Block Allocation in Nonvolatile Memory
摘要 In a multi-plane non-volatile memory, good blocks of different planes are linked for parallel operation for storing long host writes. Where bad blocks in one or more planes result in unlinked blocks, the unlinked blocks are configured for individual operation to store short host writes and/or memory system management data. Unlinked blocks may be configured as Single Level Cell (SLC) blocks while linked blocks may be configured as SLC blocks or Multi Level Cell (MLC) blocks.
申请公布号 US2016077749(A1) 申请公布日期 2016.03.17
申请号 US201414488037 申请日期 2014.09.16
申请人 SanDisk Technologies Inc. 发明人 Ravimohan Narendhiran Chinnaanangur;Jayaraman Muralitharan;Manohar Abhijeet;Bennett Alan
分类号 G06F3/06;G06F12/10 主分类号 G06F3/06
代理机构 代理人
主权项 1. A method of operating a multi-plane flash memory array comprising: identifying bad blocks in a first plane of the multi-plane flash memory array and designating a first number of good blocks of the first plane for storage of user data; identifying bad blocks in a second plane of the multi-plane flash memory array and designating a second number of good blocks of the second plane for storage of user data, the second number being greater than the first number; linking the first number of good blocks of the first plane with good blocks of the second plane to form the first number of metablocks, each of the first number of metablocks configured for parallel operation across the first and second planes; identifying a third number of good blocks in the second plane that are not linked, the third number being equal to the second number minus the first number; and configuring the third number of good blocks in the second plane for individual operation to store selected data.
地址 Plano TX US