| 发明名称 |
PRE-CLEAN OF SILICON GERMANIUM FOR PRE-METAL CONTACT AT SOURCE AND DRAIN AND PRE-HIGH K AT CHANNEL |
| 摘要 |
The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species. |
| 申请公布号 |
US2016079062(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514846215 |
申请日期 |
2015.09.04 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
ZHENG Bo;GELATOS Avgerinos V.;VYAS Anshul;HUNG Raymond Hoiman |
| 分类号 |
H01L21/02;H01L29/161;H01L21/324 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a substrate, comprising:
exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%; then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor; and then exposing the surface of the substrate to second hydrogen radical species. |
| 地址 |
Santa Clara CA US |
