| 主权项 |
1. A semiconductor light-emitting device, comprising:
a first layer having a first surface and a second surface opposing the first surface and spaced from the first surface in a first direction crossing the second surface, the first layer including a first semiconductor layer of a first conductivity type, the first surface of the first layer having a roughness including a bottom portion and a top portion, a first distance along the first direction between the bottom portion and the second surface being less than a second distance along the first direction between the top portion and the second surface; a light emitting layer adjacent to the second surface; a second layer including a second semiconductor layer of a second conductivity type, the light emitting layer being between the second surface and the second layer in the first direction; and an insulating layer on the first surface, wherein the insulating layer includes a first portion adjacent to the bottom portion and a second portion adjacent to the top portion, and a first thickness of the first portion along the first direction is greater than a second thickness of the second portion along the first direction. |
