| 发明名称 |
Silicide Region of Gate-All-Around Transistor |
| 摘要 |
The disclosure relates to a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate; a nanowire structure protruding from the substrate comprising a channel region between a source region and a drain region; a pair of silicide regions extending into opposite sides of the source region, wherein each of the pair of silicide regions comprising a vertical portion adjacent to the source region and a horizontal portion adjacent to the substrate; and a metal gate surrounding a portion the channel region. |
| 申请公布号 |
US2016079361(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201414485457 |
申请日期 |
2014.09.12 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Ching Kuo-Cheng;Liu Chi-Wen;Wang Chao-Hsiung |
| 分类号 |
H01L29/06;H01L29/45;H01L29/66;H01L21/285;H01L29/78;H01L29/423 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a nanowire structure protruding from a substrate, the nanowire structure comprising a channel region between a source region and a drain region; a silicide region annularly disposed around the source region, wherein the silicide region comprises a vertical portion adjacent to and annularly disposed around the source region, and a horizontal portion adjacent to the substrate and annularly disposed around the source region; and a metal gate surrounding a portion of the channel region. |
| 地址 |
Hsin-Chu TW |
