发明名称 |
SEMICONDUCTOR DEVICE AND FORMATION THEREOF |
摘要 |
A semiconductor device and methods of formation are provided herein. A semiconductor device includes a conductor concentrically surrounding an insulator, and the insulator concentrically surrounding a column. The conductor, the insulator and the conductor are alternately configured to be a transistor, a resistor, or a capacitor. The column also functions as a via to send signals from a first layer to a second layer of the semiconductor device. The combination of via and at least one of a transistor, a capacitor, or a resistor in a semiconductor device decreases an area penalty as compared to a semiconductor device that has vias formed separately from at least one of a transistor, a capacitor, or resistor. |
申请公布号 |
US2016079355(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201514953926 |
申请日期 |
2015.11.30 |
申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
Luo Cheng-Wei;Yen Hsiao-Tsung |
分类号 |
H01L29/06;H01L29/66;H01L49/02 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a semiconductor device comprising:
forming an opening in a substrate; implanting a dopant into a sidewall of the substrate defining the opening to define a conductor concentrically surrounding the opening; forming an insulator within a portion of the opening adjacent a sidewall of the conductor, the insulator concentrically surrounding a remaining portion of the opening; and forming a column within the remaining portion of the opening, the insulator concentrically surrounding the column. |
地址 |
Hsin-Chu TW |