发明名称 SEMICONDUCTOR DEVICE AND FORMATION THEREOF
摘要 A semiconductor device and methods of formation are provided herein. A semiconductor device includes a conductor concentrically surrounding an insulator, and the insulator concentrically surrounding a column. The conductor, the insulator and the conductor are alternately configured to be a transistor, a resistor, or a capacitor. The column also functions as a via to send signals from a first layer to a second layer of the semiconductor device. The combination of via and at least one of a transistor, a capacitor, or a resistor in a semiconductor device decreases an area penalty as compared to a semiconductor device that has vias formed separately from at least one of a transistor, a capacitor, or resistor.
申请公布号 US2016079355(A1) 申请公布日期 2016.03.17
申请号 US201514953926 申请日期 2015.11.30
申请人 Taiwan Semiconductor Manufacturing Company Limited 发明人 Luo Cheng-Wei;Yen Hsiao-Tsung
分类号 H01L29/06;H01L29/66;H01L49/02 主分类号 H01L29/06
代理机构 代理人
主权项 1. A method of forming a semiconductor device comprising: forming an opening in a substrate; implanting a dopant into a sidewall of the substrate defining the opening to define a conductor concentrically surrounding the opening; forming an insulator within a portion of the opening adjacent a sidewall of the conductor, the insulator concentrically surrounding a remaining portion of the opening; and forming a column within the remaining portion of the opening, the insulator concentrically surrounding the column.
地址 Hsin-Chu TW