| 发明名称 |
ORGANIC LIGHT EMITTING DIODE USING P-TYPE OXIDE SEMICONDUCTOR CONTAINING GALLIUM, AND PREPARATION METHOD THEREFOR |
| 摘要 |
The present invention relates to an organic light emitting diode using a p-type oxide semiconductor containing gallium, and a preparation method therefor. According to the present invention, provided is an organic light emitting diode comprising a cathode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an anode, wherein the hole injection layer is a p-type oxide semiconductor containing Ga. |
| 申请公布号 |
WO2016039585(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
WO2015KR09586 |
申请日期 |
2015.09.11 |
| 申请人 |
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY |
发明人 |
JANG, JIN;KIM, JEONG GI;AVIS, CHRISTOPHE VINCENT |
| 分类号 |
C09K11/06;H01L51/50;H01L51/52;H01L51/56 |
主分类号 |
C09K11/06 |
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